摘要
使用传统的微加工技术,如各向异性或各向同性干刻蚀、湿刻蚀只能加工有限形貌的表面,为了克服这一缺点,发展了多层掩模技术、激光三维立体光刻、电子束直接写入技术等许多三维微加工技术。灰度光刻最被看好,它通过灰度掩模把加工光束能量密度分布调制成不同的形状,对光刻胶进行曝光,微型器件一次成形,不需要移动掩模或移动加工晶片,也不需要对光刻胶进行热处理,只需要对掩模版进行一定的编码和标准的光刻设备,容易和其他IC工艺相兼容,实现系统芯片结构的制作。本文分析了它的物理机制、掩模类型、编码过程、约束条件和优化方法。
With the conventional micromachining technologies:isotropic and anisotropic dry and wet etching,only few shapes can be done. To overcome this limitation binary multi-masking technique,laser micro-stereo-lithography,or direct electron-beam-writing were used. One-step UV-lithographic method,the so-called'gray-tone lithography',seems to be the best choice to produce local intensity modulation during exposure process which leads to curved resist profiles. It requires standard lithography equipment and materials only,and basically allows for monolithic integration with other IC compatible processes. The paper analyses the gray-tone mask physical mechanism,coding and optimum process.
出处
《微纳电子技术》
CAS
2004年第10期38-43,共6页
Micronanoelectronic Technology
关键词
灰度
光刻
掩模
gray-tone
lithography
mask
