摘要
提出了一种新颖的基于非线性受控电压源的单电子晶体管宏模型 .该宏模型通过受栅压和温度控制的非线性受控电压源使温度效应和栅控效应的模拟更加方便 ,并提高了单电子晶体管特性的模拟精度 .此外 ,该宏模型结构简单 ,可以利用极小的计算机资源得到与传统的蒙特卡罗方法基本一致的模拟结果 ,并可方便地嵌入
A novel macromodel for single elect ron transistor based on non-linear dependent voltage source is presented.The ma cromodel makes use of dependent voltage source controlled by temperature and gat e voltage to make the simulations of the temperature effect and gate effect more convenient and get more accurate result.Furthermore,its circuit structure is si mple and it can be implemented easily in SPICE program for SET simulations with less CPU time compared with usual Monte Carlo method.
