摘要
采用改进的垂直无籽晶气相法生长大尺寸高质量的CdSe单晶体要求原料的纯度高。本文根据差热 (DTA)和热失重 (TG)测试结果 ,设计出连续抽空区域升华提纯CdSe原料的新方法 ,用该方法提纯的原料生长出大尺寸、高质量的CdSe单晶体。等离子体质谱仪 (ICP MS)分析结果表明 ,新方法对CdSe的提纯是有效的 。
In order to grow large size and high quality CdSe single crystals by the modified vertical unseeded vapor phase method, the purity of raw materials must be very high. Therefore a new purification method of CdSe starting materials, i.e. continuous pumping and zone sublimation, was devised according to the results of DTA and TG. It is found that the grown single crystals by purified materials with above method behave high quality and large size. The ICP-MS result showed that the method is effective for the purification of CdSe raw material. The purified CdSe materials can be used for growing large size and high quality CdSe single crystals.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2004年第3期343-345,338,共4页
Journal of Synthetic Crystals
基金
国家 8 63计划 (No .2 0 0 2AA3 2 5 0 3 0 )
四川省学术技术带头人培养基金项目资助
