摘要
在MOCVD质量控制生长模式下 ,通过分析Ⅲ -V族化合物半导体材料在衬底表面的反应过程 ,建立了一个实用的生长模型。此模型是基于分子动力学、化学反应热力学理论分析之上的。针对Turbo -Disc反应体系 ,分析了Turbo -Disc的传热以及质量传送模式后 ,建立了Turbo -Disc的生长模型。在此模型中建立了输入反应室的参数 (IPs)和边界层的生长参数的关系。在对组分匹配的GaInP/GaAs三组分生长体系进行分析时 ,发现此模型是非常有效的 ,理论计算的结果与实验得到的结果非常吻合。应用此模型在实际生产中可以迅速地得到匹配的多组分外延层。
A practical Ⅲ-V group semiconductor material growth model was obtained, when the Ⅲ-V group materials growth was investigated under MOCVD mass flow control growth process. This model is based on the molecular dynamics and chemical kinetics, etc. The Turbo-Disc growth model was formalized specified after the Turbo-Disc heat and transfer flow model was applied in the boundary layer. The relation between the inlet reactant parameters(IPs) and the boundary layer growth parameters is directly connected in this growth model. This theoretical model was found to be useful in explaining the matched GaInP/GaAs , the ternary-alloy growth. The calculations are consistent with the GaInP/GaAs epitaxial experiment results. This model is very efficient for the mass production to get the matched ternary-alloy epitaxial layers.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2004年第4期549-552,共4页
Journal of Synthetic Crystals
