摘要
用离子束合成法先后在Si(100)衬底中形成了连续的SiO_2及CoSi_2埋层,从而形成了复合的Si/CoSi_2/Si/SiO_2/Si(100)结构。卢瑟福背散射、沟道技术及用扫描电镜所作的电子通道花样被用来对这一结构形成的各个阶段进行分析。这一结构可望用于今后新型的微电子器件、光电器件及三维集成电路等。
A Si/CoSi2/Si/SiO2/Si(100) complex structure has been formed by using ion beam synthesis technique. Rutherford backscattering, channelling technique and electron channelling pattern given by scanning electron microscope have been used to analyse the formation of this structure at various stages. Such a structure is hopeful to be applied in the noval microelectronic devices, optoelectronic devices and three dimentional integrated circuits.
出处
《核技术》
EI
CAS
CSCD
北大核心
1993年第6期340-343,共4页
Nuclear Techniques
基金
国家自然科学基金
关键词
沟道技术
离子注入
化合物埋层
Ion beam synthesis RBS Channeling technique Electron channelling pattern
