摘要
分析了在ECR-MOCVD装置上外延生长GaN单晶薄膜的工艺过程特点和在此过程中影响GaN结晶质量的主要因素。在此基础上,设计了一套监控系统,用于GaN外延生长的工艺流程监控,并提出了一种合适的工艺流程监控策略。
The process characteristics of epitaxial growth for GaN single-crystal films usingECR-MOVCD devices, and the main factors which effect the GaN crystalline quality during the epi-taxial growth are analyzed. Then a set of monitoring system, which was used in the epitaxial growthprocess of GaN film was designed. Also we proposed a kind of suitable monitoring method for process.
出处
《半导体技术》
CAS
CSCD
北大核心
2004年第9期70-73,共4页
Semiconductor Technology
