摘要
根据电子镇流器控制器对基准电源的设计要求,利用不同电流密度下两晶体管基极-发射极电压差的正温度特性,通过镜像电流源方式产生PTAT(proportional to absolute temperature)电流,再结合基极-发射极电压本身的负温度特性产生的电流,形成带隙基准电流源。仿真结果表明,该基准源的性能指标能满足系统设计的要求。
From the requirements of ballast and the positive temperature characteristics of thevoltage difference of the base-emitter of two transistors, the PTAT current is produced by mirrorcurrent source and this is combined with the current produced by the negative temperature of thevoltage of the base-emitter of transistor, then the bandgap current reference source is derived. Thesimulation results show its voltage and temperature performances can meet the design requirements.
出处
《半导体技术》
CAS
CSCD
北大核心
2004年第11期61-64,共4页
Semiconductor Technology
基金
2001年度AM资助项目(0101)
