摘要
研究了WO3薄膜材料的制备工艺、气敏性能和贵金属表面改性。以钨酸为原料、加入有机络合剂的无机盐溶胶凝胶(inorganic solgelmethod,ISG)法合成了WO3薄膜。确定了最佳ISG工艺制度,即以柠檬酸为络合剂,10次成膜,预处理温度为600℃,烧成温度为650℃。实验结果表明:WO3是一种n型半导体,其最佳工作温度为550℃。通过掺杂贵金属制备了Pt/WO3薄膜材料,有效地改善了薄膜的气敏性能,可以在600℃下获得高达4100的灵敏度。WO3的气敏机理为表面控制型。
The synthesis process, gas sensitivity and surface modification by noble met al for WO3 thin films were investigated. WO3 thin film was prepared by inorganic-sol-gel (ISG) method using tungstenic acid as raw material and adding organic chelating agent. The optimal process parameters of ISG process are as follows: citric acid as chelating agent, dip-coating for ten times, pretreated at 600°C and sintered at 650°C. The testing results show that WO3 is a kind of n-type semiconductor and the most optimum working temperature is 550°C. The doping of Pt on WO3 surface can improve the sensitivity of the thin film effectively, and the sensitivity reaches to 4100 at 600°C. The mechanism of gas sensing properties of WO3 can be described as surface reaction control model.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2004年第9期1064-1067,共4页
Journal of The Chinese Ceramic Society
基金
国家基金委重大项目(599955206)
国家自然科学基金(50072014)资助项目。
