摘要
ZnO薄膜中的本征点缺陷对材料的电学、发光性能有着至关重要的影响。目前,对本征点缺陷的研究是ZnO领域的一大热点,也是实现ZnO基光电器件的关键技术之一。本文结合最新研究,扼要综述了本征点缺陷的电荷特性、对本征ZnO为n型的作用机理、对p型ZnO制备的影响及点缺陷对薄膜绿光发光的贡献。
The electrical and luminescent properties of ZnO thin film are strongly influenced by its intrinsic point defects. The research of point defects is not only an attractive subject in ZnO research areas but also one of the key technologies in preparing ZnO-based photo-conducting device. The latest studies are reviewed in this paper,that include the charge character of intrinsic point defects,the mechanism of action to form intrinsic n-type,the effect of point defects during preparation of p-type ZnO,and the contribution of point defects to green luminescence.
出处
《材料导报》
EI
CAS
CSCD
2004年第9期79-82,共4页
Materials Reports
基金
国家自然科学基金(No.60176027)
