期刊文献+

Yb:YAG的晶体生长和光谱参数计算 被引量:3

Crystal Growth and Spectral Parameter Computation of Yb:YAG
下载PDF
导出
摘要 用提拉法生长了质量优良的大尺寸Yb :YAG晶体 ,在室温下测量了它的 2 0 0~ 30 0 0nm的吸收光谱。在 2 0 0~ 390nm范围内 ,晶体的吸收来自基质YAG ;在 390~ 30 0 0nm范围内 ,仅有Yb3 + 的特征吸收。Judd Ofelt理论计算的结果表明 ,(2 4at% )Yb :YAG的电偶极子的吸收、发射振子强度分别为 3 5 8× 10 -6,4 77× 10 -6,吸收、发射跃迁几率分别为每秒 879,1171。磁偶极子的吸收、发射振子强度分别为 3 32×10 -7,4 4 3× 10 -7,吸收、发射跃迁几率分别为每秒 82 ,10 9;2 F5/ 2 能级寿命为 781μs。 In this article, a good-quality crystal Yb:.YAG was grown by pull method, and its absorption spectrum of 200-3 000 nm. was measured at room temperature. Its absorption of 200-300 nm is from the host YAG, and there exists only the characteristic absorption of Yb3+ in the range of 390-3 000 nm. Judd-Ofelt theory computation indicates that the absorption and emission oscillator strengths of electric dipole of (24 at%) Yb: YAG are 3.58 X 10(-6) and 4.77 X 10(-6), respectively, and the absorption and emission transition probabilities are 879 and 1 171/s respectively. As for magnetic dipole, the absorption and emission oscillator strengths are 3.32 X 10(-7) and 4.43 x 10(-7) respectively, and the absorption and emission transition probabilities are 82 and 109/s respectively. The lifetime of the energy level F-2(5/2) is 781 mus.
出处 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 2004年第10期1157-1160,共4页 Spectroscopy and Spectral Analysis
基金 安徽省自然科学基金 (0 1 0 4 2 4 0 3)资助项目
关键词 镱:YAG晶体 生长 光谱参数 提拉法 JUDD-OFELT理论 激光二极管 激光晶体 absorption spectrum laser crystal crystal growth Yb : YAG Judd-Ofelt theory
  • 相关文献

参考文献9

  • 1Reinberg A R, Risenberg L A, Brown R M et al. Appl. Phys. Lett., 1971, 19: 11.
  • 2Todd S Rutherford, William M Tulloch, Eric K Gustafson et al. IEEE J. Quantum Electronics, 2000, 36: 205.
  • 3Weber M J, Varitimos T E, Matsinger B H. Phys. Rev., 1973, B8(1): 47.
  • 4Pujol Maria Cinta, Massons aume J, Aguiló Magdalena et al. IEEE J. Quantum Electronics, 2002, 38(1): 93.
  • 5Aghamalyan N R, Kostanyan R B, Sanamyan T V. J. Phys. Condens. Matter, 2001, 13: 6585.
  • 6Weber M J. Phys. Rev., 1967, 157(2): 262.
  • 7Patel Falgun D, Honea Eric C, Speth Joel et al. IEEE J. Quant. Electr., 2001, 37(1): 135.
  • 8Gaird J A. IEEE J. Quant. Electr., 1975, QE-11(11): 874.
  • 9Hōnnínger C, Paschotta R et al. Appl. Phys. B, 1999, 69: 3.

同被引文献43

引证文献3

二级引证文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部