摘要
数值模拟技术已经成为分析和发展工业化晶体生长工艺必不可少的工具。提出了直拉硅单晶生长过程温度分布的有限元模拟 ,通过对3 0 0mm单晶炉内热场的数值模拟计算 ,得出了晶体生长不同阶段的单晶炉内温度分布及相应的温度梯度和热流密度分布。
Mathematical modelling and large scale simulation have become important and indispensable tools in the analysis and development of industrial crystal growth processes. A finite element method to calculate the temperature distribution of the CZ-Si single crystal was used for this purpose. Through numerical simulation of the furnace temperature in 300 mm CZ-Si single crystal, different temperature distribution during the growth of a silicon crystal, and their distributions of temperature gradient and heat flux are obtained.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2004年第5期890-893,共4页
Chinese Journal of Rare Metals
基金
国家计委超大规模集成电路用 12英寸硅单晶研制子项目
关键词
直拉硅单晶
热场
数值模拟
CZ-Si single crystal
thermal field
numerical simulation
