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基于MOSFET的固体开关技术实验研究 被引量:28

Experiment on MOSFET solid state switch
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摘要  采用两只1kVMOSFET器件及驱动模块和高带宽光纤收发对,研究了固体开关技术中的触发信号高压隔离、功率MOSFET器件栅极驱动及MOSFET串并联使用等关键技术。单器件开关获得了1kV,13A,4MHz重复频率的脉冲串输出。两器件并联开关获得了130A,2MHz的输出。两器件串联开关获得了1 6kV,2MHz重复频率脉冲串输出。 The key technologies of building a high repetition rate solid state switch were studied with two power MOSFET components, two MOSFET drivers, and fiber as high voltage isolator and optical data link. These technologies are trigger signal high voltage isolation technology, power MOSFET drive technology, power MOSFET parallel link and series link technology. Outputs of 1kV, 13A, 4MHz repetition rate on single MOSFET switch, 1.6kV, 2MHz repetition rate on two series MOSFET switch,and 130A, and 2MHz repetition rate output on two parallel MOSFET switch have been got.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2004年第11期1481-1484,共4页 High Power Laser and Particle Beams
基金 国防科技基础研究基金资助课题
关键词 FDTD MHz重复频率 MOSFET 固体开关 MHz repetition MOSFET Solid state switch
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参考文献4

  • 1[1]Saethre R, Kirbie H, Caporaso G, et al. Optical control, diagnostic and power supply system for a solid state induction modulator[A]. Proceedings of 11th IEEE International Pulsed Power Conference[C]. Baltimore Maryland, 1997. 1397-1402.
  • 2[2]Kirbie H, Cporaso G, Goerz D, et al. MHz repetition rate solid-state driver for high current induction accelerators[A]. 1999 Part Accel Conf[C]. New York City, 1999. 423-427.
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