摘要
由于具有独特的本征特性,InN材料已经成为最近两年国际上最热门的研究材料之一。本文介绍了InN材料的基本性质,探讨了材料的生长技术和应用方向。最后给出了InN材料今后发展急需解决的问题以及未来的发展应用前景。
Due to the great application potential and the secrets of the character s having been revealed,the InN material is one of the most attractive materials in recent two years. In this paper,the basic properties of InN were introduced. The growth techniques and applications of InN material were discussed. Finally,s ome questions and the prospect of the InN material in the future were given.
出处
《微纳电子技术》
CAS
2004年第12期26-32,共7页
Micronanoelectronic Technology
基金
国家重点基础研究发展规划资助项目(G2000068305)
国家高技术研究发展规划项目(2001AA3111102003AA311060)
国家自然科学基金项目(699760146980600669987001)
国家杰出青年基金项目(60025411)
江苏省自然科学基金重点项目资助(BK2003203)
关键词
INN
带隙
半导体材料
晶格常数
晶格匹配
InN
bandgap
semiconductor material
lattice parameter
lattice mismatch
