摘要
综述了制备深亚微米/纳米CMOS器件的离子蚀刻新技术:考夫曼(Kaufman)离子铣蚀刻、氟基气体多晶硅蚀刻、氯基或溴基气体硅深蚀刻、电子回旋共振(ECR)蚀刻系统和电感耦合等离子体蚀刻器(ICPE)等,并对比分析了上述蚀刻技术各自的优缺点及其应用要点。
Ion etching technologies for fabricating deep submicron /nanometer CMOS devices, which including Kaufman ion milling etching, the fluorine-based gas polycrystalline silicon etching, the chlorine-based or bromine-based gas silicon deep-etching, the electron cyclotron resonance etching system and the inductively coupled plasma etcher are summarized, also the strong and weak points and the main application points of these new ion etching technologies are analysed and compared in more details.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第1期35-40,共6页
Semiconductor Technology
基金
江苏省高校自然科学研究基金项目(02KJB510005)
