摘要
计入流体静压力效应,同时考虑量子阱中三类光学声子模(局域类体光学声子、半空间类体光学声子和界面光学声子模)对单电子基态能量的影响,采用变分法讨论GaAs/AlxGa1-xAs量子阱中自由极化子的结合能.得到了压力下三类光学声子模对极化子结合能影响随阱宽的变化关系.结果表明:极化子结合能随外加压力增加.
A variational method is used to investigate the ground state of an electron in a single semiconductor quantum well by considering the influence of pressure effect and optical phonon modes in the system( including the confined LO phonons, the half space LO phonons and interface optical phonons ). The polaron binding energy is obtained numerically for a Al_xGa_(1-x)As/GaAs quantum well system. The relations among the optical phonon modes in this system, polaron binding energy and the well width are given respectively. It is found that the polaron binding energy increases with pressure.
出处
《内蒙古大学学报（自然科学版）》
CAS
CSCD
北大核心
2005年第1期31-37,共7页
Journal of Inner Mongolia University：Natural Science Edition
基金
国家自然科学基金资助项目(60166002)
