摘要
以铁基合金掺杂FeB或B4C为触媒、石墨为碳源,在高温高压条件下合成了含硼金刚石单晶。测定了金刚石单晶颗粒在不同温度下的电阻并绘制出两参数之间的变化曲线。结果表明,当金刚石单晶中掺入硼时,其电阻大幅度降低,且电阻随温度的升高而下降,即存在负的电阻温度系数,表现出半导体材料的特性。
This paper deals with the single crystal boron-doped diamond synthesized under high temperature-high pressure from Fe-Ni-C-B system and the change of the resistance of the diamond with the temperature. The results show that the resistance of the diamond will decrease greatly and it will also decrease with increasing temperature due to mixing boron in the diamond. It means that the boron-doped diamond possesses the negative coefficient of electric resistance-temperature, and also, shows a semi-conductive characteristic.
出处
《理化检验（物理分册）》
CAS
2004年第12期606-608,共3页
Physical Testing and Chemical Analysis(Part A:Physical Testing)
基金
国家自然科学基金资助项目(50372035)
关键词
含硼金刚石单晶
电阻温度系数
半导体特性
Single crystal diamond with boron
Resistance-temperature coefficient
Semiconductive characteristic
