摘要
用二次合成法制备了掺杂WO3的PZN-PZT压电陶瓷,研究了WO3对PZN-PZT陶瓷晶胞结构与压电性能的影响,结果表明钨掺杂促进PZN-PZT陶瓷的烧结致密化,于1100℃下形成晶界清晰,结构致密的陶瓷。钨掺杂引起晶格畸变,随着钨含量的增加,晶格常数a和c减小,四方度降低;对压电性能的研究表明随着钨含量的增加,PZN-PZT陶瓷的矫顽场Ec、自发极化强度Ps、机电耦合系数Kp和压电常数d33减小,介电常数ε和机械品质因数Qm增大,绝缘电阻率ρ先增加后减小;PZN-PZT陶瓷在WO3掺杂量为1.0％(质量分数)时具有最佳综合性能。
The effect of W6+ doped on lattice structure and piezoelectric properties of 0.2PZN-0.8PZT ceramics was investigated. The results show that the pure perovskite phase form in ceramics. The lattice constant is decreasing with increasing W6+ additive, also the ratio of c/a is decreasing with the addition of tungsten, which should be attributed to replacing B-section ions such as Zn2+, Nb5+, Ti4+ and Zr4+ by W6+. The additions of tungsten will increase dielectric constant e and mechanical quality factor Qm, and decrease coercive electric field Ec, spontaneous polarization Ps, the electromechanical coupling factor Kp and piezoelectric constant d33. The composition with 1.0% (mass fraction) of WO3 addition on 0.2PZN-0.8PZT ceramics has the excellent piezoelectric properties, d33 is 314pC/N, Kp is 0. 62 with the high Qm amounted to 1178, which can meet the needs of high power piezoelectric devices.
出处
《材料工程》
EI
CAS
CSCD
北大核心
2005年第1期3-7,11,共6页
Journal of Materials Engineering
基金
航空科学基金资助项目(03G53036)中国博士后科学基金资助项目(2003033520)
关键词
掺杂
晶格常数
压电性能
电滞回线
tungsten doping
lattice structure
piezoelectric property
hysteresis loop
