期刊文献+

非晶硅碳(a-SiC∶H)薄膜光学常数的透射谱表征 被引量:6

Optical Characterization of Hydrogenated Amorphous Silicon Carbide Films from Transmission Spectra
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摘要 报道了一种用透射谱数据分析法计算非晶硅碳薄膜的厚度、折射率、吸收系数和光学带隙等光学常数的方法和程序 .这一方法引用有效谐振子模型理论的折射率色散关系 ,所有公式均为解析表达式 ,便于进行数据处理 ,无须专用软件 ,使用Excel即可完成 ,适用于多种半导体薄膜材料 .将这种方法应用于PECVD方法制备的非晶硅碳(a SiC∶H)薄膜 。 Simplified formulae and procedures are presented to compute thickness,refractive index,absorption coefficient,and optical Tauc’s gap of a-SiC∶H films by the transmission spectrum alone.An appropriate functional dependence of the refractive index on the wavelength,based on the single-effective-oscillator model,is given as a priori information of this reverse optical engineering process.All formulae are in closed form and the computations can be easily carried out on PC computer that is available in laboratories anywhere.The computation procedure has been successfully implemented for amorphous silicon carbide films prepared by PECVD.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第1期34-37,共4页 半导体学报(英文版)
基金 国家重点基础研究发展计划资助项目 (批准号 :G2 0 0 0 0 2 82 0 1)~~
关键词 光学常数 透射谱 非晶硅碳薄膜 optical constants transmission spectrum amorphous silicon carbide
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参考文献10

  • 1Roe K J,Katulka G,Kolodzey J,et al.Silicon carbide and sili-con carbide:germanium heterostructure bipolar transistors.Appl Phys Lett,2001,78:2073.?A?A
  • 2Mütze F,Seibel K,Schneider B,et al.UV imager in TFAtechnology.Presented at Materials Research Society (MRS) Spring Meeting,San Francisco,1999.
  • 3Wuu D S,Horng R H,Chan C C,et al.Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels.Appl Surf Sci,1999,144/145:708.
  • 4Amon M,Bolz A,Schaldach M.Improvement of stenting therapy with a silicon carbon coated tantalum stint.J Mater Sci Mater In Medicine,1996, 72/73:278.
  • 5Sarro P M,DeBoer C R,Korkmaz E,et al.Low-stress PECVD SiC films for IC-compatible microstructures.Sensors & Actuators A,1998,67:175.
  • 6Swanepoel R.Determination of the thickness and optical constants of amorphous silicon.J Phys E,1983,16:1214.
  • 7Swanepoel R.Determination of surface roughness and optical constants of inhomogeneous amorphous silicon.J Phys E,1984,17:896.
  • 8Wemple S H,DiDomenico M.Behavior of electronic dielectric constant in covalent and ionic materials.Phys Rev B,1971,3:1338.
  • 9Wemple S H.Refractive-index behavior of amorphous semiconductors and glasses.Phys Rev B,1973,7:3767.
  • 10Ley L.Topics in applied physics.Berlin,Heidelberg,NewYork and Tokyo:Springer-Verlag Press,1984:142.

同被引文献61

  • 1郭茂田,田臻锋,陈兴科.PLD法薄膜沉积条件对ZnO薄膜特性的影响[J].激光杂志,2006,27(3):57-58. 被引量:4
  • 2黄宇,孙建,薛俊明,马铁华,熊强,赵颖,耿新华.中频脉冲磁控溅射制备ZnO:Al透明导电薄膜[J].光电子.激光,2006,17(12):1427-1431. 被引量:6
  • 3Adolf Goetzberger, Christopher Hebling, Hans-Wemer Schock. Photovoltaic materials, history, status and outlook[ J]. Materials Science and Engineering R,2003,40:1-46
  • 4Carlson D E, Wronski C R. Amorphous Silicon Solar Cell[ J]. Appl. Phys. Lett., 1976,28:671 - 673
  • 5Green M A. Recent developments in photovoltaics[ J ]. Solar Energy,2004,76:3 - 8
  • 6Staebler D L, Wronski C R. Reversible conductivity changes in discharge-produced amorphous Si [ J ]. Appl. Phys. Lett., 1977,31:292 - 294
  • 7Sukti Hazra, Swati Ray. Photovoltaic apphcation of nanomorph silicon thin films prepared by plasma enhanced chemical vapor deposition[ J]. Jpn. J. Appl. Phys., 1999,38 : 495 - 497
  • 8Sukti Hazra, Swati Ray. Nanocrystalline silicon as intrinsic layer in thin film solar cells[ J]. Solid State Communications, 1999,109:125- 128
  • 9Edelman F, Chack A, Weil R, et al. Structure of PECVD Si : H films for solar cell application[J]. Solar Energy Materials & Solar Cells,2003,77 : 125 - 143
  • 10He Y L, Hu G Y, Yu M B, et al. Conduction mechanism of hydrogenated nanocrystalline silicon films[ J]. Physical Review B, 1999,59(19) : 15352 - 15357

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