期刊文献+

太阳电池中CdS多晶薄膜的微结构及性能 被引量:10

Microstructure and Properties of CdS Polycrystalline Thin Films for Solar Cells
下载PDF
导出
摘要 采用化学水浴法制备了CdS多晶薄膜 ,通过XRD ,AFM ,XPS和光学透过率谱等测试手段研究了CdS多晶薄膜生长过程中的结构和性能 .结果表明 ,随着沉积的进行 ,薄膜更加均匀、致密 ,与衬底粘附力增强 ,其光学能隙逐渐增大 ,薄膜由无定形结构向六方 (0 0 2 )方向优化生长 ,同时出现了Cd(OH) 2 相 .在此基础上 ,通过建立薄膜的生长机制与性能的联系 ,沉积出优质CdS多晶薄膜 ,获得了转化效率为 13 The properties of CdS thin films prepared by chemical bath deposition (CBD) during the reaction process are studied by XRD,AFM,XPS,and optical transmittance spectra measurements.The results show that as-deposited CdS thin films are more homogeneous,adherent and compact on the glass substrates with time.And the optical band gap values increase too,which relates to the extent of strain.In the early stages of the growth of CBD CdS thin films,they are amorphous.As deposition proceeds,the (002) reflection peak of hexagonal CdS,together with the hexagonal (100) Cd(OH) 2,starts to appear.Furthermore,the CdS thin films show a strong preferential orientation of hexagonal (002) planes,parallel to the substrates surface.Therefore,the properties of the CdS thin films with the growth mechanism are correlated.By optimizing and controlling qualities of CdS thin films in the reaction process,the photovoltaic conversion efficiencies of more than 13% are demonstrated for CdS/CdTe solar cells of 0.502cm 2 under air mass (AM) 1.5 conditions.One of these solar cells reaches the highest conversion efficiency of 13.38% for the domestic polycrystalline thin films solar cells.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第1期46-51,共6页 半导体学报(英文版)
基金 国家高技术研究发展计划 (批准号 :2 0 0 3AA5 13 0 10 ) 国家自然科学基金 (批准号 :5 0 0 760 3 0 )资助项目~~
关键词 CDS 多晶薄膜 水浴法 太阳电池 CdS polycrystalline thin films CBD solar cells
  • 相关文献

参考文献19

  • 1黎兵,冯良桓,郑家贵,蔡亚平,蔡伟,李卫,武莉莉.CdS薄膜的制备及其性能[J].Journal of Semiconductors,2003,24(8):837-840. 被引量:12
  • 2Ortega-Borges R,Lincot D.Mechanism of chemical bath deposition cadmium sulfide thin films in the ammonia-thiourea system.J Electrochem Soc,1993,140(12):3464.
  • 3Dona J M,Herrero J.Chemical bath deposition of CdS thin films:Electrochemical in situ kinetic studies.J Electrochem Soc,1992,139(10):2810.
  • 4Zelay-Angel O,Alvarado-Gil J J,Lozada-Morales R,et al.Band-gap shift in CdS semiconductor by photoacoustic spectroscopy:Evidence of a cubic to hexagonal lattice transition.Appl Phys Lett,1994,64:291.
  • 5De Melo O,Hernandez L,Zelaya-Angel O,et al.Low resistivity cubic phase CdS films by chemical deposition technique.Appl Phys Lett,1994,65:1278.
  • 6Kaur I,Pandya D K,Chopra K L.Growth kinetics and polymorphism of chemically deposited CdS films.J Electrochem Soc,1980,127:943.
  • 7Uda H,Ikegami S,Sonomdra H.Structural and electricalproperties of chemical-solution-deposited CdS films for solar cells.Jpn J Appl Phys,1990,29(1):30.
  • 8Kolhe S,Kulkarni S K,Nigavekar A S,et al.Effect of air annealing on CdS films.Sol Energy Mater,1984,10:47.
  • 9Tsuji M,Aramoto T,Ohyama H,et al.Characterizition of CdS thin-film in high efficient CdS/CdTe solar cells.Jpn J Appl Phys,2000,39(7A):3902.
  • 10Niles D W,Herdt G,Al-Jassim M.An X-ray photoelectron spectroscopy investigations of O impurity chemistry in CdS thin films grown by chemical bath deposition.J Appl Phys,1997,81:1978.

二级参考文献6

  • 1崔海宁,冯力.化学水浴法沉积 CdS 多晶薄膜[J].太阳能学报,1996,17(2):189-191. 被引量:11
  • 2Pavaskar N R,Menezes C A,Sinha A P B. Photoconductive CdS films by a chemical bath deposition process. J Electrochem Soc,1977,124(5):743.
  • 3Chung G Y,Kim H D,Ahn B T,et al. Properties of CdS films prepared by the chemical mist deposition Process. Thin Solid Films, 1993,232: 28.
  • 4Meyer G ,Saura J. Undoped and indium-doped CdS films prepared by chemical vapour deposition. Mater Sci, 1993, 28(19) :5335.
  • 5Uda H, Ikegami S, Sonomura H. Structural and electrical properties of chemical-solution-deposited CdS films for solar cells. Jpn J Appl Phys,1990,29(1) :30.
  • 6Chu T L,Chu S S. Thin film Ⅱ -Ⅵ photovoltaics. Solid-State Electron, 1995,38(3) :533.

共引文献11

同被引文献68

  • 1冯良桓,张静全,蔡伟,黎兵,蔡亚平,武莉莉,李卫,郑家贵,蔡道林.氩氧气氛下沉积的CdTe薄膜及太阳电池的性质[J].Journal of Semiconductors,2005,26(4):716-720. 被引量:8
  • 2李卫,冯良桓,武莉莉,蔡亚平,张静全,郑家贵,蔡伟,黎兵,雷智,张冬敏.CdS_xTe_(1-x)多晶薄膜的制备与性质研究[J].物理学报,2005,54(4):1879-1884. 被引量:15
  • 3徐慢,夏冬林,杨晟,赵修建.薄膜太阳能电池[J].材料导报,2006,20(9):109-111. 被引量:34
  • 4李卫,冯良桓,武莉莉,蔡亚平,郑家贵,蔡伟,张静全,黎兵,雷智,晋勇.CdS/CdTe太阳电池的背接触[J].Journal of Semiconductors,2007,28(4):558-562. 被引量:1
  • 5苏孙庆.多晶硅薄膜太阳能电池的研究进展[J].技术物理教学,2007,15(2):45-47. 被引量:16
  • 6Zhang Jingquan, Feng Lianghuan, Cai Wei, et al. The structural phase transition and mechanism of abnormal temperature dependence of conductivity in ZnTe : Cu polycrystalline thin films[J]. Thin Solid Films, 2002, 414(1): 113-118.
  • 7Romeo N, Bosio A, Tedeschi R, et al. A highly efficient and stable CdTe/CdS thin film solar cell solar[J]. Energy Materials & Solar Cells, 1999, 58:209-218.
  • 8Wu Xuanzhi. High-efficiency polycrystalline CdTe thin-film solar cells[J]. Solar Energy, 2004, 77:803-814.
  • 9Feng Lianghuan, Zhang Jingquan, Li Bing, et al. The electrical, optical properties of CdTe polycrystalline thin films deposited under Ar-O2 mixture atmosphere by close-spaced sublimation[J]. Thin Solid Films, 2005, 491(1-2):104-109.
  • 10Li X N,Niles D W, Hasoon F S, et al.Effect of nitric-phosphoric acid etches on material properties and back - contact formation of CdTe- based solar cells [J].J Vac Sci Technol A,1999,17(3):805.

引证文献10

二级引证文献32

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部