摘要
应用新型溶胶-凝胶法制备了ZnO陶瓷薄膜,研究了退火温度对ZnO陶瓷薄膜低压压敏电阻电性能的影响.结果表明,采用溶胶掺杂在550℃退火条件下可形成Zn7Sb2O12及ZnCr2O4相,且在退火温度范围内(550-950℃)基本上没有焦绿石相形成.当退火温度达到750℃以后,Sb2O3已全部转变为稳定性好的尖晶石相,同时存在Bi2O3、ZnO的挥发.采用适当的退火温度,可得到具有优良电性能的ZnO陶瓷薄膜低压压敏电阻,其压敏电压低于5V,非线性系数可达20,漏电流密度小于0.5μA /mm2.
The effect of annealing temperature on the electrical properties of low voltage ZnO-based ceramic film was investigated. The results show that Zn7Sb2O12 and ZnCr2O4 phases can be formed at a lower annealing temperature (550°C) by the solution doping, and the pyrochlore phase is not detected by XRD from 550°C to 950°C. Sb2O3 can be changed to spinel phase completely, and Bi2O3, ZnO may be vaporized when the annealing temperature reaches 750°C. The ZnO-based ceramic films with nonlinearity coefficient 20, nonlinear voltage 5 V and the leakage current density 0.5 μA/mm2 can be obtained by the proper annealing temperature.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2005年第1期102-106,共5页
Chinese Journal of Materials Research
