摘要
为解决功率 MOSFET因栅极驱动信号振荡产生的过热损坏问题 ,从 MOSFET的模型入手 ,给出了考虑驱动电路各寄生参数的半桥逆变电路等效模型 ,深入分析了栅极振荡的产生机理 ,推导了各参数与振荡之间的关系表达式 ,绘制了以各参数为自变量的振荡三维时域暂态关系曲线 ,并以此为依据进行参数优化设计 ,通过增加 MOSFET开通时间 ,最大程度地抑制振荡。理论分析和实验结果表明 ,改进后的驱动电路简单、实用 。
In order to eliminate the osc il lation of the MOSFET gate, a circuit model of the half-bridge inverter consider ing stray parameters of the drive circuit is put forward based on the MOSFET mod el. By analyzing the circuit topology the oscillation is caused by the high d v /d t produced during the power MOSFET switching and junction capacitance a nd distributed inductance. The drive circuit parameters are devised according to the transient timing domain three-dimensional relationship curves of parameter s responding to the oscillation. The oscillation can be obviously suppressed wit h enhancing MOSFET turn-on time. Both the theoretical analysis and experimental results indicate that the improved circuit can meet the MOSFET drive requiremen t.
出处
《南京航空航天大学学报》
EI
CAS
CSCD
北大核心
2005年第1期29-33,共5页
Journal of Nanjing University of Aeronautics & Astronautics
基金
哈尔滨工业大学交叉学科基金 (HIT.MD2 0 0 1 .2 0 )资助项目
