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a-Si∶H薄膜的再结晶技术发展概述 被引量:5

Recrystallization technology of a-Si∶H thin films
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摘要 论述了非晶硅薄膜的主要再结晶技术,包括传统的炉子退火、金属诱导晶化、微波诱导晶化、快速热退火和激光晶化。着重指出了各种晶化技术已取得的研究成果、优缺点、有待进一步研究的内容及其在多晶硅薄膜太阳电池工业生产中的应用前景。 This article presents and discusses main recrystallization technology of amorphous silicon thin films, including conventional furnace annealing, metal-induced crystallization, microwave-induced crystallization, rapid thermal annealing and laser crystallization. This article accentuates the research results achieved, the advantage and disadvantage of various recrystallization technology, the contents should be further studied and their application prospect in polysilicon thin-film solar cells industrial production.
出处 《能源工程》 2004年第6期20-23,共4页 Energy Engineering
关键词 再结晶 激光晶化 炉子 金属 快速热退火 A-SI:H薄膜 非晶硅薄膜 研究成果 amorphous silicon thin film recrystallization technology poly-Si thin films poly-Si thin-film solar cells
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参考文献13

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