摘要
信息技术的发展要求在集成电路内部用光子代替电子来传导信息,这就使得硅基光源成为技术发展的方向和光电子集成的关键,是当前急需解决的科学挑战之一。硅晶体缺陷发光是十分重要的硅基发光现象,已引起广泛的关注。在硅基位错发光原理的基础上,综述了硅晶体中缺陷的光致发光和电致发光的研究进展,以及硅晶体缺陷在发光器件方面的应用。
The advancement of information technology requires photon,taking place of electron,to conduct data inside very large scale integrated circuits.Therefore silicon based light-emitter is one of the great scientific chal- lenges at present and crucial to optoelectronics integration.The luminescence of defects in silicon is of great impor- tance and has stimulated extensive interests.Based on the understanding of dislocation-related luminescence,the re- search and application state-of-the-art of defect-related luminescence in silicon has been reviewed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2005年第1期82-85,共4页
Materials Reports
基金
国家杰出青年科学基金(项目编号:60225010)
国家自然科学基金重点项目(项目编号:5003210)
