摘要
以十甲基环五硅氧烷为反应源、采用电子回旋共振等离子体化学气相沉积 (ECR_CVD)方法制备了具有低介电常数 ,且电绝缘性能和热稳定性优良的SiCOH薄膜 .通过对富氏变换红外光谱 (FTIR)的分析 ,比较了反应源和薄膜键结构的差异 ,证实薄膜中一方面保持了源中由Si—O—Si键构成的环结构 ,另一方面形成了由大键角Si—O—Si键构成的鼠笼式结构 ,在沉积过程中失去的主要是侧链的—CH3基团 .薄膜经过 4 0 0℃热处理后 ,其介电常数由3 85降低到 2 85 ,对其FTIR谱的分析指出 。
Using decamethylcyclopentasioxane ([Si(CH3)(2)O](5) as liquid precursor, SiCOH films, which have low dielectric constant (low k), good insulating ability and thermal stability, were prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD). The FTIR spectra of the films were measured to find the difference of bond structures between SiCOH films and DM5 source. It was verified that the Si-O-Si cyclic structure was retained in SiCOH films, while -CH3 radicals were lost during the deposition. The dielectric constant decreased from 3.85 to 2.85 after the film was annealed in 400degreesC. With the analysis of the bond structure of the film as deposited and annealed, we can infer that the increased content of cage structure comprised of Si-O-Si bond with bigger bond angle may be the reason for decreased dielectric constant.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第2期892-896,共5页
Acta Physica Sinica
基金
苏州大学薄膜材料江苏省重点实验室资助的课题~~
