摘要
在不通入活性气体的条件下,采用三乙酰丙酮铱金属有机物化学气相沉积方法制备铱薄膜。结果表明:低于190℃长时间加热使先驱体分子结构改变,其C-H和C-O键断裂活性升高,导致沉积薄膜中含有显著数量的碳杂质;高于220℃加热先驱体和550℃沉积,可获得致密连续、无杂质碳并且呈亮银白色的铱薄膜。
Iridium films were prepared by using metalorganic chemical vapor deposition (MOCVD) of iridium tri(acetylacetonate) without oxygen or other gas reactants. The results show that the molecular structure of precursor is changed when heating blow 190degreesC for long time, which makes breaking activity of C-H and C-O bond in crease, hence there is notable carbon impurity in the iridium films. When heating precursor and depositing iridium films above 220degreesC and at 550degreesC respectively, dense and light iridium films were prepared without graphitic carbon impurity.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2005年第1期139-142,共4页
Rare Metal Materials and Engineering
基金
国家高技术研究发展计划(863计划)项目(2002AA305306)
关键词
铱
金属有机物化学气相沉积
先驱体
基片
iridium
metalorganic chemical vapor deposition
precursor
substrates
