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新型AgInSbTe相变薄膜的结晶活化能研究 被引量:2

Activation Energy for the Crystallization of the New Type AgInSbTe Phase Change Films
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摘要 利用磁控溅射法制备了新型AgInSbTe相变薄膜,热处理前后的X射线衍射(XRD)表明了薄膜在热作用下从非晶态转变到晶态.通过非晶态薄膜粉末的示差扫描量热(DSC)实验测定了不同升温速率条件下的结晶峰温度,计算了粉末的摩尔结晶活化能、原子激活能和频率因子.从结晶活化能E可以判断出新型AgInSbTe相变薄膜具有较高的结晶速度,可以用于高速可擦重写相变光盘. A new type AgInSbTe phase change film was prepared by direct magnetron sputtering. X-ray diffraction (XRD) spectra of the film in as-deposited and heat-treated states show the film changed from amorphous to crystalline states due to heat-treatment. By using differential scanning calorimetry (DSC) data of the amorphous film materials, measuring the peak temperature of crystallization at different heating rates, the mol activation energies for crystallization and frequency factors were calculated. By judging from the mol activation energies, the new type AgInSbTe phase change film has a high value of activation energies for crystallization and will be suitable to the high-speed phase change disks for the direct overwrite.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2005年第1期230-234,共5页 Journal of Inorganic Materials
基金 国家自然科学基金(60207005)
关键词 新型AgInSbTe相变薄膜 结晶动力学 XRD DSC new type AgInSbtTe phase change films crystallization kinetics XRD DSC
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参考文献6

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同被引文献28

  • 1顾四朋,侯立松,赵启涛,黄瑞安.掺Sn的Ge_2Sb_2Te_5相变存储薄膜的光学性质[J].光学学报,2004,24(6):735-738. 被引量:3
  • 2方铭,李青会,干福熹.热致晶化高反射率SbO_x薄膜的结构分析和光学性质[J].光学学报,2004,24(7):890-892. 被引量:3
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  • 7Guo-Fu Zhou. Materials aspects in phase change optical recording [J] . Mat. Sci. Eng. A. , 2001, 304:73 -80.
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