摘要
平面功率器件由于终端pp结的曲率效应,其高压阻断能力受到限制,为了提高高压阻断能力,本文研究了金属场限环的工作机理,进行了金属场限环结构参数的设计,阐述了其制造工艺和实验结果;并和扩散场限环进行了比较,证实了金属场限环是一种工艺简单、对工艺要求低的高压终端技术。
The planar power device's capability of blocking high voltage is limited due to the curvature effects resulting from its terminal p-n junction. The physical principle of metal field-limited-rings has been studied and analyzed to achieve higher breakdown voltage. The structure parameters of the metal ring are designed. The processing technology for metal field-limited-rings is described and test results are given. A comparison with diffused field-limited-rings shows that the metal field-limited-ring is easier to make and less sensitive to process variations.
出处
《微电子学》
CAS
CSCD
1993年第1期38-42,共5页
Microelectronics
关键词
终端技术
功率器件
金属场限环
Floating field-limited-ring,Junction termination technique,Planar power device
