摘要
采用Shu Lien Chuang方法计算了AlInGaAs/AlGaAs应变引起价带中重、轻空穴能量变化曲线,在Harrison模型的基础上详细地计算了AlInGaAs/AlGaAs和GaAs/AlGaAs量子阱电子、空穴子能级分布并且进一步研究了这两种材料在不同注入条件下的线性光增益。进一步计算比较可以得出AlInGaAs/AlGaAs应变量子阱光增益特性要优于GaAs/AlGaAs非应变量子阱增益特性,因此AlInGaAs/AlGaAs应变量子阱半导体材料应用于半导体激光器比传统GaAs/AlGaAs材料更具优势。
Using the Shu Lien Chuang method , the change of heavy and light hole energy caused by the strain calculated in the AlInGaAs/AlGaAs strain was quantum well. According to the Harrison model, the energy level distribution of the hole and electron in the strain AlIn-GaAs/AlGaAs quantum well and GaAs/AlGaAs unstrain quantum well were detailedly calculated and discussed. Further, through calculating and comparing the different quantum wells linear gain, we obtained that the AlInGaAs/AlGaAs stain quantum well has the better optical gain characteristic than the GaAs/AlGaAs unstrain quantum well. So the AlInGaAs/AlGaAs stain quantum well semiconductor material was used to fabricate semiconductor laser with the advantage over the traditional GaAs/AlGaAs material.
出处
《量子电子学报》
CAS
CSCD
北大核心
2005年第1期85-89,共5页
Chinese Journal of Quantum Electronics
基金
国家973计划资助项目(G20000683-3)
