摘要
用融熔法研制了 In_2O_3和 ITO(In_2O_3掺杂 Sn)单晶,并对其光电性能进行研究.纯 ITO 是一种简并半导体,在常温下,以晶格声子散射为主要的载流子传输机理.对 ITO 单晶,给出了载流子浓度与 Sn 掺杂浓度及载流子迁移率的关系.并对在单晶中由于用助溶剂而引入的 Pb 掺杂对材料电性能的影响作了探讨.从材料的吸收光谱图中的本征吸收限的变化及 Plasma 频率和坡度的变化,证实了我们对电性能测试的结果.EXAFS 结构测试结果给出了这二种材料导电率变化的因素.
The electrical,and optical properties of undoped and Sn-doped(ITO)single crystals pre-pared by a flux method are reported.For pure In_2O_3,it is a degenerate semiconductor and thetransport is governed mainly by phonons acoustical scattering at room temperature for ITO.The relation of carrier concentrations with Sn doping concentration and the carrier mobilityis discussed.Some influences dealing with the presence of Pb impurities in single crystal arealso presented.By absorption spectra,the shifts of fundamental transition edge and plasmafrequency,the variation of reflexion slope in infrered region are in good agreement with theelectrical measurement results.The local structural EXAFS measurement provided the infor-mation of the factors which control the electrical conductivity of this material.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第2期227-233,共7页
Journal of Inorganic Materials
关键词
电阻率
单晶
锡
氧化铟
In_2O_3
ITO
Electrical resistance
Carrier concentration
Mobility
