摘要
以La,Ce为例对轻稀土金属与Si的薄膜反应机理进行了研究。在超高真空(UHV)下,用电子束蒸发制备样品,继之以恒温电阻炉退火,并利用俄歇深度分析、X射线衍射和二次离子质谱等手段对各种等温或等时退火样品进行了分析。发现在200—400℃范围内,轻稀土金属与Si的薄膜反应存在极限,且这一极限不是稳定的化学相。文中提出一种反应模式,并以此导出反应机制,解释了实验结果。
Light rare earth metal (LREM,La,Ce)films of 1500 A thick were deposited on Si(lOO) substrate at room temperature under UHV condition. And a variety of techniques including AES,XRD and SIMS were used to study the thin film contact reaction between LREM and Si after isothermal annealing in the range of 200-400℃ for different durations. A new thin film contact reaction mechanism was observed. Taking into account the microscopic interfacial reaction, a model was suggested to elucidate this new reaction mechanism.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第10期1617-1626,共10页
Acta Physica Sinica
基金
国家自然科学基金
北京市中关村地区联合测试中心资助项目
