摘要
共振隧穿二极管因其特有的负微分电阻特性,成为一种很有前途的基于能带工程的异质结构量子器件。采用超高真空外延技术,以p型重掺杂硅为衬底生长出以4nm厚Si0.6Ge0.4层为空穴量子阱、以4nm厚Si层为空穴势垒的双势垒单量子阱结构。然后用常规半导体器件工艺制成了空穴型共振隧穿二极管。在室温下对面积为8μm×8μm的共振隧穿二极管进行测量,其峰值电流密度为45.92kA/cm2,电流峰谷比为2.21。根据测量得到的电流电压特性考虑串联电阻的影响,提取出共振隧穿二极管的直流参数。可以利用这些参数将共振隧穿二极管的直流模型加入SPICE电路模拟软件器中进行共振隧穿二极管电路设计。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance. A double-barrier-single-well structure with a 4 nm Si0.6Ge0.4 hole quantum well and a 4 nm Si hole barrier was grown on a p^+-Si substrate using ultra-high vacuum chemical vapor deposition technology. A p-well resonant tunneling diode was then successfully fabricated with conventional semiconductor technology. A peak current density of 45.92 kA/cm^2 and a peak to valley current ratio of 2.21 were obtained at room temperature for a 8 μm×8 μm RTD sample. The effect of the series resistance was used to extract the DC parameters for the RTD from the current-voltage relationship. The DC model of the RTD can then be incorporated into a SPICE-like simulator to simulate RTD-based circuits.
出处
《清华大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2005年第1期133-136,共4页
Journal of Tsinghua University(Science and Technology)
基金
国家"九七三"基础研究基金项目(2002CB311907)
国家自然科学基金资助项目(69836020
10075029)
国家教育振兴计划资助项目(JZ2001010)
关键词
共振隧穿二极管
SIGE
负微分电阻
曲线拟合
resonant tunneling diodes (RTD)
SiGe
negative differential resistance
curve fitting
