摘要
制备了对紫外光灵敏且有较高能量分辨的网栅型Au-Si表面势垒探测器,其有效面积为12.56cm^2,金网栅电极厚195×10^(-10)m。对^(241)Am 5.486 MeV α粒子在室温和低真空条件下能量分辨是55-80 keV。探讨了制备工艺并测试了性能。
The paper describes the fabrication technique and the performance of Au--Si surface barrier detectorwhich is sensitive to ultraviolet light and has high energy resolution. The active area of the Au--Si sur-face is 12. 56 cm^2. Thickness of gold mesh electrods are 195×10^(-10)m. The energy resolution is 55--80 keV for 5. 486 MeV α particle from ^(241)Am at room temperature in low vacuum.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
1993年第3期269-272,共4页
Atomic Energy Science and Technology
关键词
网栅型
探测器
面垒探测器
金-硅
Mesh type
Au-Si surface barrier detector
Photo diode
