摘要
根据近年来的文献资料总结报道几种离子注入浅结制备技术，即：大角度偏转注入、分子离子注入、双离子注入，通过介质掩膜注入，注入固体源驱入扩散再分布、等离子体浸没离子注入（ＰＩＩＩ）和反冲离子注入等。
A number of fabrication technologies of shallow junction by ion implantation are reported in this paper based on recent literatures. These technologies include wide-angle deflection implantation, molecule-ion implantation,dual ion implantation,implantation through dielectric mask , drive-in diffusion redistribution of implantated solid source,PIII and recoil ion implantation , etc.
出处
《半导体光电》
CAS
CSCD
北大核心
1994年第2期125-129,共5页
Semiconductor Optoelectronics
关键词
离子注入
快速退火
浅结
半导体器件
Ion Implantation, RTA, Shallow Junction, Fabrication
