摘要
通过研究60Coγ射线对MOSFET的线性特性和输出特性的影响,定性地描述了氧化物电荷积累和Si/SiO2界面态增加分别与P-MOSFET和N-MOSFET的迁移率μ退化、跨导gm下降以及输出特性曲线漂移等的依赖关系。试验结果表明,对于P-MOSFET,电离辐照感生氧化物电荷积累和界面态密度增加都将导致器件模拟特性的退化;对于N-MOSFET,这种退化主要由辐射感生Si/SiO2界面态密度增加所支配。
The effects of 6oCo γ-ray on the linearity and output characteristics of MOSFETs were investigated. The relations of oxide-trapped charge and Si/SiO2 interface state density to the decrease of mobility p and transconductance gm, and the shift of the output curves for both P-MOSFETs and N-MOSFETs were qualitatively described. It was shown that degradation of analog characteristics, for P-MOSFETs, resulted from both oxide-trapped charge and interface state, but the degradation for N-MOSFETs was mainly due to the increase of radiation induced Si/SiO2 interface state density.
出处
《核技术》
CAS
CSCD
北大核心
1994年第9期525-530,共6页
Nuclear Techniques
关键词
辐射效应
MOSFET
模拟特性
Ionizing radiation effect
MOSFET
Analog characteristics