摘要
在ｐ－型ＨｇＴｅ／ＣｄＴｅ超晶格材料上制作金属－绝缘体－半导体（ＭＩＳ）结构．报道了ＨｇＴｅ／ＣｄＴｅ超晶格的分子束外延生长、器件制作和测量结果．研究表明，比较宽的ＣｄＴｅ势垒阻碍了少子（电子）到界面的迁移，在７７Ｋ强反型区域的低频电容不能达到绝缘层电容，类似于普通ＭＩＳ器件的高频Ｃ—Ｖ曲线．
Metal-insulator-semiconductor (MIS) strueture were fabricated with p-type HgTe/CdTe superlattice. The MBE growth, device fabrication and measurement results are described. The results show that the wide CdTe barrier impedes the movements of minorities (electrons) to the interface and the low frequency capacity can't reach the insulator capacity at 77K in the strong inversion region, which is very similar to high frequency C-V curves of ordinary MIS structures.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第1期73-76,共4页
Journal of Infrared and Millimeter Waves
