1Stephen A Campbell.微电子制造科学原理与工程技术[M].北京:电子工业出版社,2003.337.
2张俊彦 郑晃忠.集成电路制程及设备技术手册[Z].台湾,1997.45.
3Wilson E The diffusion of boron and phosphorus in the Si-SiO2 system [J].Solid State Electron, 1988, 15: 961.
4Wolf S, Tauber R N. Silicon Processing for the VLSI Era-Volumel:Process Technology [M]. California, Lattice Press, 1994. 183-189.
5Dobkin Daniel MI Silicon dioxide: properties and applications[EB/OL].http://www.timedomaincvd.com/CVD_Fundamentals/fi lms/SiO2_properties. html.
6Nauka K, Liu C. Suppression of water absorption in (BPSG) thin layers with high boron concentration |J]. J Electrochem Soc, 1991, 138, 2367.
7Daniel,Dobkin. Boron and phosphorus diffusion in SiO2 and SiOxNy[EB/OL].http://www.batnet.com/enigmatics/semiconductor_process ing/selected_shorts/B_and_P_diff.html.
8Aoyama T, Suzuki K. Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitride [J]. J Appl Phys, 1995,77: 417.
9Wilson E The diffusion of boron and phosphorus in the Si-SiO2 system [J]. Solid State Electron, 1988, 15: 961.
10Wolf S, Tauber R N. Silicon Processing for the VLSI Era-Volumel: Process Technology [M]. California, Lattice Press, 1994. 183-189.
