摘要
采用射频磁控溅射法在玻璃衬底上制备出高质量的镓掺杂氧化锌 (ZnO∶Ga)透明导电膜 ,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究 .制备的ZnO∶Ga是具有六角纤锌矿结构的多晶薄膜 ,最佳择优取向为 (0 0 2 )方向 .薄膜的最低电阻率达到了 3 9× 10 -4Ω·cm ,方块电阻约为 4 6Ω/□ ,薄膜具有良好的附着性 ,在可见光区的平均透过率达到 90 %以上 .
Gallium doped zinc oxide (ZnO∶Ga) films were prepared on glass substrates by RF magnetron sputtering at room temperature.The structural,electrical,and optical properties of the ZnO∶Ga films were investigated in terms of the preparation conditions.The obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction in the ZnO grains.The transmittance of the ZnO∶Ga films in the visible range is over 90%.The lowest resistivity of 3 9×10 -4Ω·cm and the lowest sheet resistance of 4 6Ω/□ are obtained for these ZnO∶Ga films.
基金
国家自然科学基金(批准号:6027044)
博士点基金(批准号:20020422056)资助项目~~
关键词
磁控溅射
ZNO:GA
光电特性
magnetron sputtering
ZnO∶Ga films
electrical and optical properties
