摘要
光刻胶作为离子束刻蚀的掩膜已得到了普遍采用，由于它在受到离子束轰击时会发热收缩、不利于刻蚀线条高宽比的提高，限制了它的进一步使用。在离子束的轰击下，光刻胶的收缩不仅与其发热程度有关，而且与刻蚀线条的宽度也有关，通过改变刻蚀时基片和旋转台之间的热接触状态发现，光刻胶发热越厉害，收缩量越大。而在光刻胶发热程度很小或者不发热时，收缩量极小，可以忽略不计。而在同一发热状态下，不同宽度线条的光刻胶收缩量也不一样，宽度越大，收缩量就越大，宽度越小，收缩量也越小。结果造成在不同宽度线条的接合处，线条边缘出现弯曲。
Photoresist has been extensively used as a mask of ion beam etch ing,butits shrinkage resulting from heat of ion bombardment limits the improvementof aspect ratio of etched line。Under ion incidence, shrinkage of resist is con-cemed not only with the bombardment produced heat but aiso with the widthof line. Different shrinkages are observed by changing heat induction state bet-ween wafer and wafer holder,The more the heat in the photoresist,the lar-ger its shrinkage. Furthermore,shrinkage varies with width of etched lineunder cei tain heat.The wider the line,the larger the shrinkage,Eventuallya bend at the joint of lines of different widths resulting from their differentShrinkages is observed.
出处
《微细加工技术》
1994年第3期22-26,共5页
Microfabrication Technology
关键词
离子束刻蚀
光刻胶
收缩
微电子器件
ion beam etching
photoresist
heat induction:shrinkage
