摘要
采用自行研制的增益开关驱动电路产生的电脉冲驱动半导体激光器,从实验上研究了输出激光的脉宽、功率随偏置电流及驱动电脉冲的变化情况,找出了最佳工作点。并通过解析模型和数值计算两种途径从理论上较好地解释了实验结果。
A semiconductor laser is driven by a electrical circuit of gain switch, the variations of its pulse width and power vs bias current and driving pulse are studied. The optimal parameters are found. The shortest pulse width of this semiconductor laser is 26 ps. Also, using analytic?! model and numerical calculation, the experimental results are simulated successfully.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第4期580-590,共11页
Acta Physica Sinica
