摘要
通过低温退火工艺以实现ａ－Ｓｉ：Ｈ膜的局部ｎ型轻掺杂，控制了固相晶化过程中的成核中心密度，获得了较大晶粒的良质多晶硅膜。有关测试结果表明：晶化过程是较均衡地沿（１１１），（２２０），（３１１）晶向进行，而按（１１１）晶向择优取向，测得晶粒粒径１μｍ，迁移率９２．７ｃｍ￣２／Ｖ·ｓ，室温暗电导率在１０￣－２—１０￣（－４）ｓ／ｃｍ之间，在８００—１０００ｎｍ波段的吸收系数为１０￣４ｃｍ￣（－１）的数量级，相应的吸收效率６０％。由吸收能谱图测得晶化膜的光学能隙宽度在１．１６—１．２２ｅＶ之间。为了进行对比，对重掺杂的ｎ￣＋ａ－Ｓｉ：Ｈ膜退火试样也作了相应的论述。
By lightly doping in a-Si: H films in the process of low- temperature annealing. the density of the nualeation centers was controlled,and the films of larger grainpolysilicon with good quality were obtained. The results show that the crystallizationwas almost uniformly proceed in〈111〉,〈220〉and〈311〉direction(slightly fasterin〈111〉direction),the average grain size is about 1μm,the mobility is about 92cm￣2/V·s,and the dark conductivity at room-temperature is between 10￣2s/cm and10￣(-4)/cm. The optical gaps of the crystallized films were determined between 1.16 1.22eV from the absorption spectrum.The coefficient of optical absorption within thewave length range of 800 1000nm is on the order of 10￣4cm￣(-1), and the absorption ef- ficiency is around 60%。 The results of heavily doped annealing samples of a-Si:H,as a contrast,are also discussed
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第6期966-972,共7页
Acta Physica Sinica
基金
国家自然科学基金
