摘要
在无规分形结构的ａ氧化铝陶瓷断面上，用射频溅射法镀制了银薄膜，其Ｉ－Ｖ特性在空气中呈非线性行为，而在原位真空测量中表现为开关形式的电压击穿效应。基于衬底的结构特性，作者对上述现象作了合理的解释。
The silver thin films were deposited on the substrates of the a-alumina ceramicwhich possess a random fractal structure.The I_V characteristics of such films exhibit nonlinear behavior in air and a switching type voltage breakdown effect by insitu measurement in vacuum. Based on the structure geometry of the substrate,weexplaine these phenomena with the developed Randonm Tunnelling Junction Networkmodel.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第10期1688-1692,共5页
Acta Physica Sinica
