摘要
对１─１００ｅｖ的低能位子轰击Ｓｉ（００１）－２×１表面进行了分子动力学模拟研究，利用二维偶对相关函数分析了低能轰击对表面层原子行为的影响。研究表明，１０ｅＶ，１００ｅＶ粒子的轰击，一方面增强了表面原子形成二聚体的能力，使表面二聚体成键数量增加；另一方面，也使表面原子的排列更趋无序。１ｅＶ的粒子对表面原子行为的影响不大，只是使表面原子的振动加剧。
Abstract Molecular dynamics simulations were perforlnedfor 1- 100eV particle bombard-ments of Si(001)-2× 1 surface. The two dimensional pair correlation functions we-re obtained to investigate the arrangement of surface atoms after such bombardments. The results show that 10eV and 100eV bombardments had the some effects on the be-haviour of surface atoms. On one hand, 10eV and 100eV bombardments imprpvedthe mobility of surface atoms and produced more dimer. On the other hand, theyincreased the disordering of surface atom’s arrangement and made the surface tendto be amorphous.
出处
《物理学报》
CSCD
北大核心
1994年第11期1809-1815,共7页
Acta Physica Sinica
