摘要
测量了ＢａＳｎ＿（１－ｘ）Ｓｂ＿ｘＯ＿（３－δ）和Ｂａ＿（１－ｙ）Ｌａ＿ｙＳｎＯ＿（３－δ）样品的低温电阻率和磁化率．实验结果表明，在较低温度区域，两类样品的导电机制均是传导电子的范围可变跳跃。而在较高温度区域，ＢａＳｎ＿（１－ｘ）Ｓｂ＿ｘＯ＿（３－δ）样品的电导主要是电子从定域态到扩展态的跃迁所贡献，Ｂａ＿（１－ｙ）Ｌａ＿ｙＳｎＯ＿（３－δ）样品的电导则可能来源于电子的最近邻跳跃。
Abstract The temperature dependence of resistivity and magnetic susceptibility was mea-sured for both BaSn_(1-x)Sb_xO(3-δ) and Ba_(1-y)La_ySnO(3-δ) systems below room temperatur.The results show that the mechanism of conduction is the variable range hoppingfor both systems at lower temperature. Whereas the two types of mechanism ofconduction at higher temperature, are considered the nearest-neighbor hopping(Ba_(1-y)La_ySnO(3-δ))and as the excitation of elec trons to the conduction band(BaSn_(1-x)Sb_xO_(3-δ))
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1994年第11期1840-1845,共6页
Acta Physica Sinica
基金
上海大学青年科学研究基金和国家教育委员会留学人员服务中心基金
