摘要
利用反应离子刻蚀工艺实现硅基SiO2 平面光波导的刻蚀 ,研究了不同刻蚀条件对刻蚀速率、刻蚀选择比、刻蚀侧壁光洁度等刻蚀结果的影响 ,并首次研究了分别以无定形硅与多晶硅作为SiO2 波导刻蚀掩膜对刻蚀垂直度的影响。利用改进的SiO2 反应离子刻蚀工艺 ,得到了传输损耗极低的SiO2 光波导。
Influence of various etching conditions on the etching rate,etching selectivity and sidewall roughness in reactive ion etching (RIE) technology for fabricating silica-on-silicon planar lightwave circuits.For the first time,amorphous Si:H a nd poly-Si were used as mask,respectively,and how they affect the vertical angl e of the etched sidewalls in fabricating silica wave-guedes was studied and com pared.In addition,we succeeded in fabricating SiO 2 wave-guides of very low tr ansmission loss with the optimized reactive ion etching.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2004年第6期434-438,共5页
Chinese Journal of Vacuum Science and Technology
基金
国家高技术研究发展计划 (863 )课题 (2 0 0 1AA1110 3 0
2 0 0 2AA10 3 0 64 )基金资助项目
