摘要
利用镜像电荷模型 ,对静电场中单根纳米导线尖端的电势和电场进行计算 ,得到纳米导线发射体尖端场增强因子表达式为 β0 =h ρ+3 5 .若考虑极板间距对场增强因子的影响 ,则场增强因子的表达式调整为 β =hρ +3 5+A hd3,其中h ,ρ分别为纳米导线的长度和半径 ,d为极板间距 ,A为常数 .结果表明纳米导线的长径比对场增强因子的影响最显著 ,而极板间距对纳米导线的场增强因子只有微弱影响 ,随极板距离的增加而减小 .
The potential and the electric field at the end of the individual nanowire under an electric field were calculated with the image charge model. With the nanowire as a field emitter, the enhancement factor was given by the expression: beta(0) = h/rho + 3.5. Taking into account the influence of the anode-cathode distance, the enhancement factor at the end of the nanowire could be adjusted based on the equation: beta = h/rho + 3.5 + A ( h/d)(3), where h and rho are the length and the radius of the nanowire respectively; d is the anode-cathode distance and A is a constant. From the above results, it is concluded that the aspect ratio is the most important factor for the nanowire emitter and the anode-cathode distance also slightly influence the enhancement factor of the nanowire in field emission, and the enhancement factor increases with the decrease of the anode-cathode distance.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第3期1347-1351,共5页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :60 2 710 0 9)资助的课题 .~~
