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VHF-PECVD制备不同氢稀释条件下硅薄膜特性分析 被引量:6

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD
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摘要 本文集中报导了不同硅烷浓度条件下,制备的系列硅薄膜电学特性和结构特性的分析研究。结果表明:随着硅烷浓度的逐渐减小,材料逐渐地由非晶向微晶转变。傅立叶变换红外吸收 (FTIR)的测试结果表明:微晶硅材料存在着自然的不稳定性,表现为氧含量随着时间的推移而增多。而且,微结构因子(IR)的结果给出:对于适用于电池有源层的微晶硅材料来说,其IR不能太大,也不能太小,本实验中相对好的微晶硅材料其IR为 31%。 Samples prepared at different silane concentrations (SCs) were studied with the analysis of electronic and structural properties. The results show that the materials change from amorphous to microcrystalline silicon with the decrease of SC. The results of FTIR indicate that microcrystalline silicon exists instability, and the oxygen content increases with the process of time. In addition, the results of IR show that microcrystalline silicon with good properties should have a moderate value. As for our materials, IR of the material characterized relatively good properties was 31%.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2005年第1期56-59,64,共5页 Journal of Synthetic Crystals
基金 国家"973"重大基础研究项目 (No.G2000028202 G2000028203 ) 教育部项目 (No. 02167 ) 国际合作项目 ( 2002DFG00051 ) "863"重大项目(No. 2002303261)
关键词 硅材料 硅薄膜 VHF-PECVD 有源层 微晶 晶向 电学特性 度条件 因子 不稳定性 VHF-PECVD microcrystalline silicon thin film, flourier transform infrared absorption
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参考文献9

  • 1Rech B, Roschek T, Repmann T, Muller J, Schmitz R, Appenzelleer W. Microcrystalline Silicon for Large Area Thin Film Solar Cells [ J]. Thin Solid Films, 2003,427 ( 1-2 ): 157 -165.
  • 2Meier J, Vallat-Sauvain E, Dubail S, Kroll U, Dubail J, Golay S, Feitknecht L, Torres P, Fay S, Fischer D, Shah A. Microcrystalline/Micromorph Silicon Thin-film Solar Cells Prepared by VHF-GD Technique [ J]. Solar Energy Materials & Solar Cells ,2001,66:73-84.
  • 3Kepper H, Meier J, Torres P, Fischer D, Shah A. Microcrystalline Silicon and Micromorph Tandem Solar Cells [ J]. Appl. Phys. , 1999, A69:169-177.
  • 4杨恢东,吴春亚,朱锋,麦耀华,张晓丹,赵颖,耿新华,熊绍珍.射频辉光放电硅烷等离子体的光发射谱研究[J].光电子.激光,2003,14(4):375-379. 被引量:19
  • 5张晓丹,朱锋,赵颖,侯国付,魏长春,孙建,张德坤,任慧志,薛俊明,耿新华,熊绍珍.气压对VHF-PECVD制备的μc-Si∶H薄膜特性影响的研究[J].人工晶体学报,2004,33(3):414-418. 被引量:14
  • 6张晓丹,赵颖,朱锋,魏长春,吴春亚,高艳涛,侯国付,孙建,耿新华,熊绍珍.VHF-PECVD低温制备微晶硅薄膜的拉曼散射光谱和光发射谱研究[J].物理学报,2005,54(1):445-449. 被引量:20
  • 7Finger F, Carius R, Dylla T, Klain S, et al. Stability of Microcrystalline Silicon for Thin Film Solar Cell Applications [J]. IEE Proc. -Circuits DevicesSyst. ,2003:150(4).
  • 8ShahAV, Meier J, Vallat-Sauvain E, et al. Material and Solar CellResearch in Microcrystalline Silicon [ J]. Solar Energy Materials & Solar Cells,2003,78 469-491.
  • 9Koll U, Meier J, Torres P et al. From Amorphous to Microcrystalline Silicon Films Prepared by Hydrogen Dilution Using the VHF(70MHz)GD Technique[J]. J. Non-Cryst. Solids,1998,227-230:68-72.

二级参考文献26

  • 1杨恢东,吴春亚,赵颖,麦耀华,张晓丹,薛俊明,任慧志,耿新华,熊绍珍.氢化微晶硅薄膜制备过程中的氧污染问题[J].太阳能学报,2003,24(z1):5-8. 被引量:4
  • 2张晓丹,朱锋,赵颖,薛俊明,孙建,耿新华,熊绍珍.VHF-PECVD制备微晶硅材料及电池初步研究[J].太阳能学报,2004,25(6):789-793. 被引量:4
  • 3[1]Shah A,Torres P,Tscharner R,et al.Photovoltaic technology:the case for thin-film solar cells[J].Science,1999,285:692-698.
  • 4[2]Wehrspohn R B,Powell M J,Deane S C,et al.Dangling-bond defect state creation in microcrystalline silicon thin film transistors[J].Appl.Phys.Lett.,2000,77(5):1-3.
  • 5[3]Knipp D,Stiebig H,Folsch J,et al.Amorphous silicon based nipiin structure for color detection[J].J.Appl.Phys.,1998,83(3):1463-1468.
  • 6[4]Shah A,Meier J,Vallat-Sauvain E,et al.Microcrystalline silicon and micromorph tandem solar cells[J].Thin Solid Films,2002,403-404:179-187.
  • 7[5]MAI Yao-hua,LI Hong-bo,XUE Jun-ming,et al.A new model for light trapping scheme of a-Si solar cell and its optimization[J].J.of Optoelectronics*Laser(光电子*激光),2001,12(12):1222-1225.(in Chinese)
  • 8[6]Perrin J.Plasma and surface reactions during a-Si:H film growth[J].J.of Non-Cryst.Solids,1991,137&138:639-644.
  • 9[7]Fukuda Y,Sakuma Y,Fukai C,et al.Optical emission spectroscopy study toward high rate growth of microcrystalline silicon[J].Thin Solid Films,2001,386:256-260.
  • 10[8]Paranjpe A P,McVittie J P,Self S A.A tuned langmuir probe for measurements in fr glow discharges[J].J.Appl.Phys.,1990,67(11):6718-6727.

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