摘要
本文提出了一种改进型的高阻表面结构 ,将其应用于微带天线 ,可使天线增益提高 0 .9dB左右 ,背瓣降低 15dB左右 ,天线性能的提高明显优于应用普通高阻表面结构的天线 .制作了实际的天线 ,测量结果与仿真结果基本一致 .
In this paper,a novel improved High-impedance Surface structure is introduced.U sing the improved structure,the gain of microstrip patch antenna is increased by about 0.9dB,and the back radiation is decreased by about 15dB.The performance i s improved much more than the antenna using normal High-impedance Surface struc ture.Several antennas are manufactured,and the measured results are basically ac cordant to simulated results.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2005年第3期511-513,共3页
Acta Electronica Sinica
基金
国家安全重大基础 (973)预研资助项目 (No .51 30 7)
关键词
光子晶体
电磁带隙
高阻表面
表面波
增益
背瓣
photonic crystals
Electromagnetic Band-gap
High-impedance Surface
surface wave
gain
back lobe
