摘要
报道了利用As4 作为掺杂源获得原位As掺杂MBEHgCdTe材料的研究结果.利用高温退火技术激活As使其占据Te位形成受主.对原位As掺杂MBEHgCdTe材料进行SIMS及Hall测试,证实利用原位As掺杂及高温退火可获得P型MBEHgCdTe材料.
The study on As-4-doped HgCdTe epilayers grown by MBE was presented. The electrical activation of arsenic impurities was achieved by annealing that caused As to occupy Te sites. By using the secondary ion mass spectrometry (SIMS) and Hall measurements on the in situ arsenic doped HgCdTe epilayers, the results show that P-type MBE HgCdTe can be obtained by doping with As, source and annealing with high temperature.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第2期81-83,共3页
Journal of Infrared and Millimeter Waves
基金
TheprojectsupportedbytheNationalNaturalScienceFoundationofChina(60221502)
