摘要
采用DC磁控溅射法在玻璃基片上制备了FeCoSiB薄膜和FeCoSiB/Cu/FeCoSiB 三明治膜,并进行磁场退火热处理以消除残余应力和形成磁织构,提高薄膜的应力阻抗效应。薄膜的磁性能采用振动样品磁强计(VSM)进行测试,采用HP4275A 型阻抗分析仪在200kHz^10MHz频率范围内测试薄膜的应力阻抗效应。结果表明,磁场退火热处理可形成感生磁各向异性,改善薄膜的软磁性能、提高薄膜的应力阻抗效应。在温度低于300℃时,随着退火温度的增加,薄膜的应力阻抗效应增大;当退火温度超过300℃时,薄膜的应力阻抗效应随退火温度增加而降低。与Fe CoSiB单层膜相比, FeCoSiB/Cu/FeCoSiB 三明治膜应力阻抗效应较大。10MHz测试频率下,在基片末端位移为450μm时,经300℃热处理的三明治膜达到了8.3%,而单层膜仅有1.86%。当测试频率较高为10和4MHz时,薄膜的应力阻抗效应变化不大,当测试频率下降到低于1MHz时,薄膜的应力阻抗效应显著降低。
In this paper, FeCoSiB films and FeCoSiB/Cu/FeCoSiB sandwich layers were deposited on glass substrates by DC magnetron sputtering. Film magnetic performances were analysed by vibrating sample magnetometer (VSM). Film stress impedance effect was investigated at the frequency range from 200 kHz to 10 MHz by HP4275A impedance analyzer. The results show that magneto-annealing can improve film stress impedance effect and film soft magnetic performances, and induce magneto-anisotropy. At 10 MHz and annealing temperature lower than 300°C, with the increase of annealing temperature, film stress impedance effect was increased. However, when annealing temperature is higher than 300°C, film stress impedance effect is decreased. Compared to FeCoSiB film, FeCoSiB/Cu/FeCoSiB sandwich layer stress impedance effect is improved. At 10 MHz and 450 mm displace, the stress impedance effect of 300°C annealed FeCoSiB/Cu/FeCoSiB sandwich layers can reach to 8.3%, but only 1.75% for FeCoSiB films. When analyzing frequency was higher than 4 MHz, the influence of analyzing frequency on film stress impedance effect can be ignored. With the decrease of measuring frequency less than 1 MHz, film stress impedance effect decreases greatly.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2005年第4期516-518,共3页
Journal of Functional Materials
基金
国防预研基金资助项目(51412010304DZ0238)
