摘要
采用真空热压烧结方法 ,制备了性能优异的Si Al电子封装材料。其热导率高于 110W·m- 1 ·K- 1 ,热膨胀系数从 5～ 10 μm·K- 1 可调控 ,密度低于 2 .5g·cm- 3。真空热压方法通过外界压力来克服非润湿状态下的毛细阻力 ,达到硅颗粒均匀分布 ,铝相呈连续网络状包裹的理想复合形貌组织。在铝熔点以上温度点进行的液相烧结均满足封装性能要求 ,且热压时间短、压力低。实验结果表明 :热膨胀系数主要由硅含量确定 。
The Si-Al electronic packaging materials were fabricated by hot-pressing. Their thermal conductivities are more than 110 W·m^(-1)·K^(-1), and for coefficients of thermal expansion varying from 5 to 11 μm·K^(-1) which can be controlled, for densities lower than 2.5 g·cm^(-3). Owing to the pressure applied, the network composites produced by hot pressing are sound, with no porosity. Composites sintered in the liquid phase, having shorter sintering time and lower pressure, always satisfy the electronic packaging applications. The results indicate that the coefficients of thermal expansion of the composites are mainly charged by the amount of Si, and a critical pressure is of importance in determining the final microstructure and the properties of the composites.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2005年第1期11-15,共5页
Chinese Journal of Rare Metals
关键词
电子封装
硅铝
复合材料
热压
热导
热膨胀系数
electronic packaging
Si-Al
composites
hot pressing
thermal conductivity
coefficient of thermal expansion
